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P3601MSH HS6121 ERIES 5257B CA3096AE HS12045 MB91F4 C1608
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 (2/5




4 - O6.5 2 -M6
108 93 9
20
(E) 4 (G) 3
48
4 3
2 -M4
24 11
20
29
25.5
7
23
LABEL
13
14 16
62
(E) 2
(C) 1
2
1
Dimension:mm ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal (kgfcm)
, .
ise urn-on all urn-off ime ime ime ime = 1200V,= 0V = 20V,= 0V = 400A,= 15V = 5V,= 400mA = 10V,= 0V,= 1MH = 600V L= 1.5 G= 3.9 = 15V . . . . 25,200 . . . . . . . . . . . .
ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime
orward urrent eak orward oltage everse ecovery ime

. . . . . . .

= 400A,= 0V = 400A,= -10V i/t= 800A/s

hermal mpedance iode th(j-c) Junction to Case . . . .
00
(3/5
Fig.1- Output Characteristics (Typical)
800
TC=25C VGE=20V 12V 11V
Fig.2- Output Characteristics (Typical)
800
TC=125C VGE=20V 12V 11V
700 600
15V
700 600
15V
Collector Current I C (A)
10V
500 400
Collector Current I C (A)
10V
500 400 300 200 100 0
9V
300 200 100 0
9V
8V 7V
0 1 2 3 4 5
8V 7V
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25C
16 14 12 10 8 6 4 2 0
TC=125C IC=200A 400A 800A
IC=200A
800A
Collector to Emitter Voltage V CE (V)
400A
12 10 8 6 4 2 0
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
14
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
800 700
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
16 14 300000 100000
RL=1.5 TC=25C
Collector to Emitter Voltage V CE (V)
VGE=0V f=1MHZ TC=25C Cies
Gate to Emitter Voltage VGE (V)
600 500 400 300 200 100 0 0
12 10 8 6 4 2 0 3000
Capacitance C (pF)
30000 10000
VCE=600V 400V 200V
3000 1000
Coes
Cres
300 100
500
1000
1500
2000
2500
0.1
0.2
0.5
1
2
5
10
20
50
100
200
Total Gate Charge Qg (nC)
Collector to Emitter Voltage VCE (V)
00
(4/5
Fig.7- Collector Current vs. Switching Time (Typical)
2 5
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
VCC=600V IC=400A VGE=15V TC=25C Resistive Load toff
1.6
VCC=600V RG=3.9 VGE=15V TC=25C Resistive Load
3
Switching Time t (s)
Switching Time t (s)
tOFF
1.2
1
0.3
0.8
tf tON tr(VCE)
0 100 200 300 400
tf
ton
0.4
0.1
tr(V CE)
0
0.03
1
3
10
30
Collector Current IC (A)
Series Gate Impedance RG ( )
Fig.9- Collector Current vs. Switching Time
10 10
Fig.10- Series Gate Impedance vs. Switching Time
VCC=600V IC=400A VGE=15V TC=125C Inductive Load toff ton
3
tOFF
Switching Time t (s)
1
VCC=600V RG=3.9 VGE=15V TC=125C Inductive Load
5
Switching Time t (s)
2 1 0.5
tf
0.3
tON
0.1
0.2 0.1 0.05
tr(Ic)
tf
0.03
tr(IC )
0.01
0
100
200
300
400
500
0.02
1
3
10
30
Collector Current IC (A)
Series Gate Impedance RG ( )
Fig.11- Collector Current vs. Switching Loss
140
Fig.12- Series Gate Impedance vs. Switching Loss
500
120
Switching Loss ESW (mJ/Pulse)
100
Switching Loss ESW (mJ/Pulse)
VCC=600V RG=3.9 VGE=15V TC=125C Inductive Load
300
VCC=600V IC=400A VGE=15V TC=125C Inductive Load
EON
EON EOFF
80
100
60
EOFF ERR
40
30
ERR
20
0 0 100 200 300 400 500 600
10 1 3 10 30
Collector Current IC (A)
Series Gate Impedance RG ( )
00
(5/5
800
Fig.13- Forward Characteristics of Free Wheeling Diode (Typical)
Fig.14- Reverse Recovery Characteristics (Typical)
1000
Forward Current I F (A)
600
TC=25C
TC=125C
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
IF=400A TC=25C TC=125C
trr
300
400
100
200
IRrM
0
0
1
2
3
4
30
0
400
800
1200
1600
2000
2400
2800
Forward Voltage VF (V)
-di/dt (A/s)
Fig.15- Reverse Bias Safe Operating Area (Typical)
2000 1000 300
RG=3.9 , VGE=15V, TC=125C
Collector Current I C (A)
100 30 10 3 1 0.3 0.1 0
200
400
600
800
1000
1200
1400
Collector to Emitter Voltage V CE (V)
3x10 -1
Fig.16- Transient Thermal Impedance
FRD
Transient Thermal Impedance Rth (J-C) (C/W)
1x10 -1
IGBT
3x10 -2
1x10 -2
3x10 -3
1x10 -3
TC=25C 1 Shot Pulse
3x10 -4 10 -5
10 -4
10 -3
10 -2
10 -1
1
10 1
Time t (s)
00


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